The second line always states the number of V D S points. Save the script using this file name: hw2_p3.py File Format You are provided two data files to use for testing (download them from Canvas): - SSOI2_NMOS_data.txt (full set of actual measured values) - reduced_data.txt (a subset of the SSOI2 file to make it easier for you to experiment with) The internal organization of each file looks like this: - The first line always states the number of V GS points. Your script should work for any data file that follows the format described below. Important: - Your script should have a title block and reasonable in-line comments. Remember to identify each curve in some reasonable manner.) In your document, embed an image of your graph that uses data from SSOI2_NMOS_data.txt. For labels and titles, review the problem introduction to get an idea of what to say. (Note: Use your knowledge of how to create good graph. The I D axis should be displayed in milli-ampere units. (Hint: Consider whether multiple 1-D arrays or a single 2-D array is more efficient.) - Plots the characteristic I D − V D S curve for each V GS on the same graph (similar to the image shown previously). (The file with this name should contain measured I D − V D S data.) - Reads the raw data from the file and stores it in appropriate arrays. Task Write a Python script that meets these specifications: - Prompts the user to enter a file name. The measurement is repeated for several increasing values of V GS . This creates a single I D − V D S curve for that specific V GS . The V D S voltage is then swept from 0 to some upper limit, and the I D current is measured at each V D S point. The resulting "characteristic curves" are plotted on the same graph, similar to the figure below, Real-life measurement process: - A chosen V GS voltage is applied to the gate of the transistor. Typically, the data is measured for several values of gate voltage ( V G s ).
The drain current versus the drain voltage (i.e., I D versus V D S ) is important when describing the performance of the transistor. The amount of current is controlled by the gate voltage V GS . I D is the drain current that flows from D to S V D S is the drain-to-source voltage V GS is the gate-to-source voltage For an NMOS transistor with the source connected to ground, applying a positive V D S voltage causes a current I D to flow.
The terminals are the drain (D), source (S), and gate (G). Figure 1 shows a three-terminal NMOS-type device. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is an active electronic component that can be used either as a digital switch or as anplifier.
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